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Features
* Single Voltage Operation * * *
- 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 104K Words (208K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds Word-By-Word Programming - 50 s/Word Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 50 mA Active Current - 300 A CMOS Standby Current Typical 10,000 Write Cycles
* * * * * *
Description
The AT49F2048 is a 5-volt-only, 2 megabit Flash Memory organized as 128K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 300 A. To allow for simple in-system reprogrammability, the AT49F2048 does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to
2-Megabit (128K x 16) 5-volt Only CMOS Flash Memory AT49F2048
(continued)
Pin Configurations
Pin Name A0 - A16 CE OE WE RESET I/O0 - I/O15 NC Function Addresses Chip Enable Output Enable Write Enable Reset Data Inputs/Outputs No Connect TSOP Top View Type 1 SOIC (SOP)
0568D-A-9/97
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reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus connection. The AT49F2048 is a 5-voltonly, 2 megabit Flash Memory organized as 128K words contention. Reprogramming the AT49F2048 is performed by first erasing a block of data and then programming on a word-by-word basis. The device is erased by executing the erase command sequence; the device internally controls the erase operation. The memory is divided into three blocks for erase operations. There are two 8K word parameter block sections and one sector consisting of the boot block and the main memory array block. The AT49F2048 is programmed on a word-by-word basis.
The device has the capability to protect the data in the boot block; this feature is enabled by a command sequence. Once the boot block programming lockout feature is enabled, the data in the boot block cannot be changed when input levels of 5.5 volts or less are used. The typical number of program and erase cycles is in excess of 10,000 cycles. The optional 8K word boot block section includes a reprogramming lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is protected from being reprogrammed.
Block Diagram
Device Operation
READ: The AT49F2048 is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line control gives designers flexibility in preventing bus contention. COMMAND SEQUENCES: When the device is first powered on it will be reset to the read or standby mode depending upon the state of the control line inputs. In order to perform other device functions, a series of command sequences are entered into the device. The command sequences are shown in the Command Definitions table (I/O8 - I/O15 are don't care inputs for the command codes). The command sequences are written by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard microprocessor write timings are used. The address loca2 tions used in the command sequences are not affected by entering the command sequences. RESET: A RESET input pin is provided to ease some system applications. When RESET is at a logic high level, the device is in its standard operating mode. A low level on the RESET input halts the present device operation and puts the outputs of the device in a high impedance state. When a high level is reasserted on the RESET pin, the device returns to the Read or Standby mode, depending upon the state of the control inputs. By applying a 12V 0.5V input signal to the RESET pin the boot block array can be reprogrammed even if the boot block program lockout feature has been enabled (see Boot Block Programming Lockout Override section). ERASURE: Before a word can be reprogrammed, it must be erased. The erased state of the memory bits is a logical "1". The entire device can be erased at one time by using a 6-byte software code.
AT49F2048
AT49F2048
After the software chip erase has been initiated, the device will internally time the erase operation so that no external clocks are required. The maximum time needed to erase the whole chip is tEC. CHIP ERASE: If the boot block lockout has been enabled, the Chip Erase function is disabled; sector erases for the parameter blocks and main memory block will still operate. After the full chip erase the device will return back to read mode. Any command during chip erase will be ignored. SECTOR ERASE: As an alternative to a full chip erase, the device is organized into three sectors that can be individually erased. There are two 8K word parameter block sections and one sector consisting of the boot block and the main memory array block. The Sector Erase command is a six bus cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while the 30H data input command is latched at the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will automatically time to completion. When the boot block programming lockout feature is not enabled, the boot block and the main memory block will erase together (from the same sector erase command). Once the boot region has been protected, only the main memory array sector will erase when its sector erase command is issued. WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logical "0") on a word-byword basis. Programming is accomplished via the internal device command register and is a 4 bus cycle operation. The device will automatically generate the required internal program pulses. Any commands written to the chip during the embedded programming cycle will be ignored. If a hardware reset happens during programming, the data at the location being programmed will be corrupted. Please note that a data "0" cannot be programmed back to a "1"; only erase operations can convert "0"s to "1"s. Programming is completed after the specified tBP cycle time. The DATA polling feature may also be used to indicate the end of a program cycle. BOOT BLOCK PROGRAMMING LOCKOUT: The device has one designated block that has a programming lockout feature. This feature prevents programming of data in the designated block once the feature has been enabled. The size of the block is 8K words. This block, referred to as the boot block, can contain secure code that is used to bring up the system. Enabling the lockout feature will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; the boot block's usage as a write protected region is optional to the user. The address range of the boot block is 00000H to 01FFFH. Once the feature is enabled, the data in the boot block can no longer be erased or programmed when input levels of 5.5V or less are used. Data in the main memory block can still be changed through the regular programming method. To activate the lockout feature, a series of six program commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table. BOOT BLOCK LOCKOUT DETECTION: A software method is available to determine if programming of the boot block section is locked out. When the device is in the software product identification mode (see Software Product Identification Entry and Exit sections) a read from address location 00002H will show if programming the boot block is locked out. If the data on I/O0 is low, the boot block can be programmed; if the data on I/O0 is high, the program lockout feature has been enabled and the block cannot be programmed. The software product identification exit code should be used to return to standard operation. BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE: The user can override the boot block programming lockout by taking the RESET pin to 12 volts. By doing this protected boot block data can be altered through a chip erase, sector erase or word programming. When the RESET pin is brought back to TTL levels the boot block programming lockout feature is again active. PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external programmer to identify the correct programming algorithm for the Atmel product. For details, see Operating Modes (for hardware operation) or Software Product Identification. The manufacturer and device code is the same for both modes. DATA POLLING: The AT49F2048 features DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin. During a chip or sector erase operation, an attempt to read the device will give a "0" on I/O7. Once the program or erase cycle has completed, true data will be read from the device. DATA polling may begin at any time during the program cycle. TOGGLE BIT: In addition to DATA polling the AT49F2048 provides another method for determining the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle. HARDWARE DATA PROTECTION: Hardware features protect against inadvertent programs to the AT49F2048 in the following ways: (a) V CC sense: if V CC is below 3.8V
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(typical), the program function is inhibited. (b) VCC power on delay: once VCC has reached the VCC sense level, the device will automatically time out 10 ms (typical) before programming. (c) Program inhibit: holding any one of OE
low, CE high or WE high inhibits program cycles. (d) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle.
Command Definition (in Hex)(1)
Command Sequence Read Chip Erase Sector Erase Word Program Boot Block Lockout(2) Product ID Entry Product ID Exit(3) Product ID Exit(3) Notes: Bus Cycles 1 6 6 4 6 3 3 1 1st Bus Cycle Addr Addr 5555 5555 5555 5555 5555 5555 xxxx Data DOUT AA AA AA AA AA AA F0 2AAA 2AAA 2AAA 2AAA 2AAA 2AAA 55 55 55 55 55 55 5555 5555 5555 5555 5555 5555 80 80 A0 80 90 F0 5555 5555 Addr 5555 AA AA DIN AA 2AAA 55 5555 40 2AAA 2AAA 55 55 5555 SA(4)(5) 10 30 2nd Bus Cycle Addr Data 3rd Bus Cycle Addr Data 4th Bus Cycle Addr Data 5th Bus Cycle Addr Data 6th Bus Cycle Addr Data
1. The DATA FORMAT in each bus cycle is as follows: I/O15 - I/O8 (Don't Care); I/O7 - I/O0 (Hex) 2. The 8K word boot sector has the address range 00000H to 01FFFH. 3. Either one of the Product ID Exit commands can be used. 4. SA = sector addresses: SA = 03XXX for PARAMETER BLOCK 1 SA = 05XXX for PARAMETER BLOCK 2 SA = 1FXXX for MAIN MEMORY ARRAY 5. When the boot block programming lockout feature is not enabled, the boot block and the main memory block will erase together (from the same sector erase command). Once the boot region has been protected, only the main memory array sector will erase when its sector erase command is issued.
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55C to +125C Storage Temperature ..................................... -65C to +150C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground ............................ -0.6V to VCC + 0.6V Voltage on OE with Respect to Ground ...................................-0.6V to +13.5V *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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AT49F2048
AT49F2048
DC and AC Operating Range
AT49F2048-70
Operating Temperature (Case) VCC Power Supply Com. Ind. 0C - 70C -40C - 85C 5V 10%
AT49F2048-90
0C - 70C -40C - 85C 5V 10%
AT49F2048-12
0C - 70C -40C - 85C 5V 10%
Operating Modes
Mode
Read Program/Erase
(2)
CE
VIL VIL VIH X X X X
OE
VIL VIH X
(1)
WE
VIH VIL X VIH X X X
RESET
VIH VIH VIH VIH VIH VIH VIL
Ai
Ai Ai X
I/O
DOUT DIN High Z
Standby/Write Inhibit Program Inhibit Program Inhibit Output Disable Reset Product Identification
X VIL VIH X
High Z X High Z
Hardware
VIL
VIL
VIH
VIH
A1 - A16 = VIL, A9 = VH,(3) A0 = VIL A1 - A16 = VIL, A9 = VH,(3) A0 = VIH A0 = VIL, A1 - A16 = VIL A0 = VIH, A1 - A16 = VIL
Manufacturer Code(4) Device Code(4) Manufacturer Code(4) Device Code(4)
Software(5)
VIH
Notes:
1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. 3. VH = 12.0V 0.5V. 4. Manufacturer Code: 1FH, Device Code: 82H 5. See details under Software Product Identification Entry/Exit.
DC Characteristics
Symbol
ILI ILO ISB1 ISB2 ICC(1) VIL VIH VOL VOH1 VOH2
Parameter
Input Load Current Output Leakage Current VCC Standby Current CMOS VCC Standby Current TTL VCC Active Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Output High Voltage CMOS
Condition
VIN = 0V to VCC VI/O = 0V to VCC CE = VCC - 0.3V to VCC CE = 2.0V to VCC f = 5 MHz; IOUT = 0 mA
Min
Max
10 10 300 3 50 0.8
Units
A A A mA mA V V
2.0 IOL = 2.1 mA IOH = -400 A IOH = -100 A; VCC = 4.5V 2.4 4.2 .45
V V V
Note:
1. In the erase mode, ICC is 90 mA.
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AC Read Characteristics
AT49F2048-70 Symbol
tACC tCE(1) tOE(2) tDF(3)(4) tOH
AT49F2048-90 Min Max
90 90 0 0 0 40 25
AT49F2048-12 Min Max
120 120 0 0 0 50 30
Parameter
Address to Output Delay CE to Output Delay OE to Output Delay CE or OE to Output Float Output Hold from OE, CE or Address, whichever occurred first
Min
Max
70 70 35
Units
ns ns ns ns ns
0 0
25
AC Read Waveforms(1)(2)(3)(4)
ADDRESS CE tCE tOE tDF tACC OUTPUT
Notes: 1. 2. 3. 4.
ADDRESS VALID
OE
tOH OUTPUT VALID
HIGH Z
CE may be delayed up to tACC - tCE after the address transition without impact on tACC. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). This parameter is characterized and is not 100% tested.
Input Test Waveforms and Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance
(f = 1 MHz, T = 25C)(1)
Typ CIN COUT Note: 4 8 Max 6 12 Units pF pF Conditions VIN = 0V VOUT = 0V
1. This parameter is characterized and is not 100% tested.
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AT49F2048
AT49F2048
AC Word Load Characteristics
Symbol tAS, tOES tAH tCS tCH tWP tDS tDH, tOEH tWPH Parameter Address, OE Set-up Time Address Hold Time Chip Select Set-up Time Chip Select Hold Time Write Pulse Width (WE or CE) Data Set-up Time Data, OE Hold Time Write Pulse Width High Min 10 50 0 0 100 50 10 100 Max Units ns ns ns ns ns ns ns ns
AC Word Load Waveforms
WE Controlled
OE tOES ADDRESS tAS CE tCS WE tWP tDS DATA IN tWPH tDH tAH tCH tOEH
CE Controlled
OE tOES ADDRESS tAS WE tCS CE tWP tDS DATA IN tWPH tDH tAH tCH tOEH
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Program Cycle Characteristics
Symbol tBP tAS tAH tDS tDH tWP tWPH tEC Parameter Word Programming Time Address Set-up Time Address Hold Time Data Set-up Time Data Hold Time Write Pulse Width Write Pulse Width High Erase Cycle Time 10 50 50 10 100 100 10 Min Max 50 Units s ns ns ns ns ns ns seconds
Program Cycle Waveforms
PROGRAM CYCLE OE
CE tWP WE tAS A0-A16 5555 tDS DATA AA 55 A0
INPUT DATA
tWPH
tBP
tAH 2AAA
tDH 5555 ADDRESS 5555
AA
Sector or Chip Erase Cycle Waveforms
OE
(1)
CE tWP WE tAS A0-A16 5555 tDS DATA AA WORD 0 55 WORD 1 80 WORD 2 AA WORD 3 55 WORD 4 Note 3 WORD 5 tAH 2AAA tDH 5555 5555 2AAA Note 2 tEC tWPH
Notes:
1. 2. 3.
OE must be high only when WE and CE are both low. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased. (See note 4 under command definitions.) For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
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AT49F2048
AT49F2048
Data Polling Characteristics(1)
Symbol tDH tOEH tOE tWR Notes: Parameter Data Hold Time OE Hold Time OE to Output Delay(2) Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics. 0 Min 10 10 Typ Max Units ns ns ns ns
Data Polling Waveforms
WE
CE tOEH OE tDH I/O7 tOE HIGH Z tWR
A0-A16
An
An
An
An
An
Toggle Bit Characteristics(1)
Symbol tDH tOEH tOE tOEHP tWR Notes: Parameter Data Hold Time OE Hold Time OE to Output Delay(2) 150 0 Min 10 10 Typ Max Units ns ns ns ns ns
OE High Pulse Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See tOE spec in AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
WE
CE tOEH OE tDH I/O6 tOE HIGH Z tWR tOEHP
Notes:
1. 2. 3.
Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling input(s). Beginning and ending state of I/O6 will vary. Any address location may be used but the address should not vary.
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Software Product Identification Entry(1)
LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 90 TO ADDRESS 5555 ENTER PRODUCT IDENTIFICATION MODE(2)(3)(5)
Boot Block Lockout Enable Algorithm(1)
LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 80 TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 40 TO ADDRESS 5555
Software Product Identification Exit(1)(6)
LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA F0 TO ADDRESS 5555 EXIT PRODUCT IDENTIFICATION MODE(4)
OR
LOAD DATA F0 TO ANY ADDRESS EXIT PRODUCT IDENTIFICATION MODE(4)
PAUSE 1 second
Notes:
1.
Data Format: I/O15 - I/O8 (Don't Care); I/O7 - I/O0 (Hex) Address Format: A14 - A0 (Hex). Boot block lockout feature enabled.
2.
Notes:
1.
Data Format: I/O15 - I/O8 (Don't Care); I/O7 - I/O0 (Hex) Address Format: A14 - A0 (Hex). A1 - A16 = VIL. Manufacture Code is read for A0 = VIL; Device Code is read for A0 = VIH. The device does not remain in identification mode if powered down. The device returns to standard operation mode. Manufacturer Code: 1FH Device Code: 82H Either one of the Product ID Exit commands can be used.
2.
3. 4. 5. 6.
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AT49F2048
AT49F2048
Ordering Information(1)
tACC (ns) 70 Active 50 50 90 50 50 120 50 50 ICC (mA) Standby 0.3 0.3 0.3 0.3 0.3 0.3 Ordering Code AT49F2048-70RC AT49F2048-70TC AT49F2048-70RI AT49F2048-70TI AT49F2048-90RC AT49F2048-90TC AT49F2048-90RI AT49F2048-90TI AT49F2048-12RC AT49F2048-12TC AT49F2048-12RI AT49F2048-12TI Package 44R 48T 44R 48T 44R 48T 44R 48T 44R 48T 44R 48T Operation Range Commercial (0 to 70C) Industrial (-40 to 85C) Commercial (0 to 70C) Industrial (-40 to 85C) Commercial (0 to 70C) Industrial (-40 to 85C)
Note:
1. The AT49F2048 has as optional boot block feature. The part number shown in the Ordering Information table is for devices with the boot block in the lower address range (i.e., 00000H to 01FFFH). Users requiring the boot block to be in the higher address range should contact Atmel.
Package Type 44R 48T 44-Lead, 0.525" Wide, Plastic Gull-Wing Small Outline Package (SOIC/SOP) 48-Lead, Thin Small Outline Package (TSOP)
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